PART |
Description |
Maker |
TGA2623-CP TGA2623-CP-15 |
10 to 11 GHz 32 W GaN Power Amplifier
|
TriQuint Semiconductor
|
T1G6000528-Q3 T1G6000528-Q3-EVB3 |
7W, 28V, DC ?6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
TGA2576-FL-15 |
2.5 to 6 GHz GaN HEMT Power Amplifier
|
TriQuint Semiconductor
|
CMPA1C1D060D |
60 W, 12.7 - 13.25 GHz, 40 V, GaN MMIC, Power Amplifier
|
Cree, Inc
|
CMPA801B025F-AMP CMPA801B025F-TB CMPA801B025P |
25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier
|
Cree, Inc
|
TGA2576-FL |
2.5 to 6 GHz GaN HEMT Power Amplifier
|
TriQuint Semiconductor
|
T1G6003028-FS T1G6003028-FSEVB1 T1G6003028-FS-15 |
30W, 28V, DC ?6 GHz, GaN RF Power Transistor 30W, 28V, DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
T2G4003532-FS-15 |
30W, 32V DC 3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
T2G405528-FS-EVB2 T2G4005528-FS |
55W, 28V DC 3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
MAGX-002731-SB1PPR MAGX-002731-030L00 |
GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle
|
M/A-COM Technology Solutions, Inc.
|
MAGX-002735-SB0PPR MAGX-002735-040L00 |
GaN HEMT Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu...
|
CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
|